inchange semiconductor isc product specification isc website www.iscsemi.cn isc silicon npn power transistor 2N5240 description high voltage- : v ceo(sus) = 300v(min) wide area of safe operation applications designed for use in series regulators, power amplifiers, inverters, deflection circuits, switching regulators, and high-voltage bridge amplifiers. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base v oltage 375 v v cer(sus) collector-emitter voltage r be 50 350 v v ceo(sus) collector-emitter v oltage 300 v v ebo emitter-base voltage 6 v i c collector current-continuous 5 a i b base current 2 a p c collector power dissipation @ t c =25 100 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.75 /w
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistor 2N5240 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.2a ;i b = 0 300 v v ceo(sus) collector-emitter sustaining voltage i c = 0.2a ;r be 50 350 v v (br)ebo emitter-base breakdown voltage i e = 0.02a; i c = 0 6 v v ce( sat )-1 collector-emitter saturation voltage i c = 2a; i b = 0.25a 2.5 v v ce( sat )-2 collector-emitter saturation voltage i c = 4.5a; i b = 1.125a 5.0 v v be( on ) base-emitter on voltage i c = 2a ; v ce = 10v 3.0 v i cev collector cutoff current v ce =375v; v be = -1.5v v ce =300v; v be = -1.5v;t c = 150 2 3 ma i ceo collector cutoff current v ce = 200v; i b = 0 2 ma i ebo emitter cutoff current v eb = 6v; i c =0 5 ma h fe-1 dc current gain i c = 0.4a; v ce = 10v 20 80 h fe-2 dc current gain i c = 2a; v ce = 10v 20 80 h fe-3 dc current gain i c = 4.5a; v ce = 10v 5 f t current-gain bandwidth product i c = 0.2a; v ce = 10v 2 mhz c ob output capacitance i e = 0; v cb = 10v; f test = 1.0mhz 250 pf
|
